A CDMA2000 Zero IF Receiver with Low-Leakage Integrated Front-End
A CDMA2000 Zero IF Receiver with Low-Leakage Integrated Front-End
This paper describes a highly integrated CDMA 2000 US-CEL band (880-MHz) receiver. The single-chip zero-IF design incorporates all receiver signal-path functions including the low-noise amplifier (LNA) on a single die. The complete receiver design exceeds the stringent linearity and local oscillator (LO) leakage requirements for this standard arising from the coexistence with narrow-band FM signals. The integrated LNA achieves 1.0-dB noise figure with +9-dBm IIP3 at high gain, and by maintaining LO leakage to the antenna port well below 80~dBm at all gain settings, no external LNA is required. The receiver is fabricated in a 0.25-µm 40-GHz ft BICMOS technology, and occupies 3mm2.
1175-1179
Waite, H.
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Ta, P.
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Chen, J.
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Li, H.
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Gao, M.
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Chang, C.S.
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Chang, Y.S.
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Redman-White, W.
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Charlton, O.
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Fan, Y.
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Perkins, R.
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Brunel, D.
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Soudee, E.
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Lecacheur, N.
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Clamagirand, S.
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July 2004
Waite, H.
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Ta, P.
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Chen, J.
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Li, H.
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Gao, M.
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Chang, C.S.
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Chang, Y.S.
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Redman-White, W.
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Charlton, O.
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Fan, Y.
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Perkins, R.
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Brunel, D.
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Soudee, E.
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Lecacheur, N.
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Clamagirand, S.
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Waite, H., Ta, P., Chen, J., Li, H., Gao, M., Chang, C.S., Chang, Y.S., Redman-White, W., Charlton, O., Fan, Y., Perkins, R., Brunel, D., Soudee, E., Lecacheur, N. and Clamagirand, S.
(2004)
A CDMA2000 Zero IF Receiver with Low-Leakage Integrated Front-End.
IEEE Journal of Solid State Circuits, 39 (7), .
Abstract
This paper describes a highly integrated CDMA 2000 US-CEL band (880-MHz) receiver. The single-chip zero-IF design incorporates all receiver signal-path functions including the low-noise amplifier (LNA) on a single die. The complete receiver design exceeds the stringent linearity and local oscillator (LO) leakage requirements for this standard arising from the coexistence with narrow-band FM signals. The integrated LNA achieves 1.0-dB noise figure with +9-dBm IIP3 at high gain, and by maintaining LO leakage to the antenna port well below 80~dBm at all gain settings, no external LNA is required. The receiver is fabricated in a 0.25-µm 40-GHz ft BICMOS technology, and occupies 3mm2.
Text
JSSCR2Rx_Jul0411.pdf
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More information
Published date: July 2004
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 259979
URI: http://eprints.soton.ac.uk/id/eprint/259979
ISSN: 0018-9200
PURE UUID: 6687e14e-93a1-4d41-b804-577a1b812cd8
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Date deposited: 20 Sep 2004
Last modified: 14 Mar 2024 06:30
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Contributors
Author:
H. Waite
Author:
P. Ta
Author:
J. Chen
Author:
H. Li
Author:
M. Gao
Author:
C.S. Chang
Author:
Y.S. Chang
Author:
W. Redman-White
Author:
O. Charlton
Author:
Y. Fan
Author:
R. Perkins
Author:
D. Brunel
Author:
E. Soudee
Author:
N. Lecacheur
Author:
S. Clamagirand
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