Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R. and Ashburn, P. (2005) Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. Solid State Electronics, 49, 529-534.
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| Item Type: | Article |
|---|---|
| Keywords: | Elevated source/drain, selective epitaxy, epitaxy, CMOS |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260748 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 02 Mar 2012 12:59 |
| Contributors: | Waite, A.M. (Author) Lloyd, N.S. (Author) Osman, K. (Author) Zhang, W. (Author) Ernst, T. (Author) Achard, H. (Author) Wang, Y. (Author) Deleonibus, S. (Author) Hemment, P.L.F. (Author) Bagnall, D.M. (Author) Evans, A.G.R. (Author) Ashburn, P. (Author) |
| Date: | 2005 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/260748 |
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