Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs
Hakim, M M A, de Groot, C H, Gili, E, Uchino, T, Hall, S and Ashburn, P (2005) Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs. At 6th International Conference on ULtimate Integration of Silicon (ULIS), Bologna, Italy, 07 - 08 Apr 2005. , 131-134.
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| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 7-8 April |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260772 |
| Date Deposited: | 15 Apr 2005 |
| Last Modified: | 02 Mar 2012 11:40 |
| Contributors: | Hakim, M M A (Author) de Groot, C H (Author) Gili, E (Author) Uchino, T (Author) Hall, S (Author) Ashburn, P (Author) |
| Date: | April 2005 |
| Additional Information: | Event Dates: 7-8 April |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/260772 |
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