Room-temperature polariton lasers based on GaN microcavities
Malpuech, Guillaume, Di Carlo, Aldo, Kavokin, Alexey, Baumberg, Jeremy J., Zamfirescu, Marian and Lugli, Paolo (2002) Room-temperature polariton lasers based on GaN microcavities. APPLIED PHYSICS LETTERS, 81, (3), 412-414.
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The critical temperature for Bose condensation of exciton polaritons in an AlGaN microcavity containing 9 GaN quantum wells is calculated to be T5460 K. We have modeled the kinetics of polaritons in such a microcavity device using the two-dimensional Boltzmann equation. Room-temperature lasing is found with a threshold as small as 100 mW. The kinetic blocking of polariton relaxation that prevents formation of the Bose-condensed phase of polaritons at low temperatures disappears at high temperatures, especially in n-doped samples. Thus, GaN microcavities are excellent candidates for realization of room-temperature polariton lasers.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||31 May 2006|
|Last Modified:||27 Mar 2014 20:06|
|Publisher:||American Institute of Physics|
|Further Information:||Google Scholar|
|ISI Citation Count:||124|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Available Versions of this Item
Room-temperature polariton lasers based on GaN microcavities. (deposited 18 Jul 2002)
- Room-temperature polariton lasers based on GaN microcavities. (deposited 31 May 2006) [Currently Displayed]
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