Silicon spin diffusion transistor: materials, physics and device characteristics
Dennis, C L, Tiusan, C, Gregg, J F, Ensell, G and Thompson, S M (2005) Silicon spin diffusion transistor: materials, physics and device characteristics. Journal of Physics D: Applied Physics, 152, (4), 340-354.
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Description/Abstract
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In this paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents
| Item Type: | Article |
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| Related URLs: | |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263360 |
| Date Deposited: | 01 Feb 2007 |
| Last Modified: | 02 Mar 2012 13:41 |
| Contributors: | Dennis, C L (Author) Tiusan, C (Author) Gregg, J F (Author) Ensell, G (Author) Thompson, S M (Author) |
| Date: | August 2005 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 5 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263360 |
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- Silicon spin diffusion transistor: materials, physics and device characteristics. (deposited 01 Feb 2007) [Currently Displayed]
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