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Silicon spin diffusion transistor: materials, physics and device characteristics

Silicon spin diffusion transistor: materials, physics and device characteristics
Silicon spin diffusion transistor: materials, physics and device characteristics
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In this paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents
1350-2409
340-354
Dennis, C L
6989eaf1-23d9-4a0e-bacc-6aa58d1b87fc
Tiusan, C
afde8878-7b8e-4791-8494-314ab66f0039
Gregg, J F
a965f013-b84d-4b2d-8916-43c73b0803cf
Ensell, G
5ed85009-4be4-4850-b95c-fbb367b67d15
Thompson, S M
ab27fce1-79a4-4b7e-b583-bb1c8b2124f0
Dennis, C L
6989eaf1-23d9-4a0e-bacc-6aa58d1b87fc
Tiusan, C
afde8878-7b8e-4791-8494-314ab66f0039
Gregg, J F
a965f013-b84d-4b2d-8916-43c73b0803cf
Ensell, G
5ed85009-4be4-4850-b95c-fbb367b67d15
Thompson, S M
ab27fce1-79a4-4b7e-b583-bb1c8b2124f0

Dennis, C L, Tiusan, C, Gregg, J F, Ensell, G and Thompson, S M (2005) Silicon spin diffusion transistor: materials, physics and device characteristics. IEE Proceedings - Circuits, Devices and Systems, 152 (4), 340-354.

Record type: Article

Abstract

The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In this paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents

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Published date: August 2005
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263605
URI: https://eprints.soton.ac.uk/id/eprint/263605
ISSN: 1350-2409
PURE UUID: 3c4604cf-898d-4669-a996-20b820b7a10a

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Date deposited: 23 Feb 2007
Last modified: 18 Jul 2017 07:43

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