A novel area efficient floating field limiting ring edge termination technique


Souza, M M De, Bose, J V SubhasChandra, Narayanan, E M Sankara, Pease, T J, Ensell, G J and Humphry, J (2000) A novel area efficient floating field limiting ring edge termination technique. Solid State Electronics, 44, (8), 1381-1386.

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Description/Abstract

In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure.

Item Type: Article
ISSNs: 0038-1101
Keywords: BREAKDOWN VOLTAGE; PLANAR DEVICES; PLATE
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 263603
Date Deposited: 23 Feb 2007
Last Modified: 02 Mar 2012 11:58
Contributors: Souza, M M De (Author)
Bose, J V SubhasChandra (Author)
Narayanan, E M Sankara (Author)
Pease, T J (Author)
Ensell, G J (Author)
Humphry, J (Author)
Date: August 2000
Status: Published
Publisher: PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263603

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