A novel area efficient floating field limiting ring edge termination technique

Souza, M M De, Bose, J V SubhasChandra, Narayanan, E M Sankara, Pease, T J, Ensell, G J and Humphry, J (2000) A novel area efficient floating field limiting ring edge termination technique. Solid State Electronics, 44, (8), 1381-1386.

This is the latest version of this item.


[img] PDF
Download (470Kb)


In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure.

Item Type: Article
ISSNs: 0038-1101
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263603
Accepted Date and Publication Date:
August 2000Published
Date Deposited: 23 Feb 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263603

Available Versions of this Item

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics