Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime


Evans, G. , Mizuta, Hiroshi and Ahmed, H. (2001) Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime. Japanese Journal of Applied Physics, 40, 5837-5840.

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Item Type: Article
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266213
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2001Published
Date Deposited: 22 Jul 2008 09:01
Last Modified: 31 Mar 2016 14:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266213

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