Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's


Mizuta, Hiroshi, Yamaguchi, K. , Yamane, M. , Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's. IEEE Transactions on Electron Devices, ED-36, 2307-2314.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266247
Date Deposited: 22 Jul 2008 10:44
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266247

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