Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's
Mizuta, Hiroshi, Yamaguchi, K. , Yamane, M. , Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's. IEEE Transactions on Electron Devices, ED-36, 2307-2314.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266247 |
| Date Deposited: | 22 Jul 2008 10:44 |
| Last Modified: | 02 Mar 2012 14:04 |
| Contributors: | Mizuta, Hiroshi (Author) Yamaguchi, K. (Author) Yamane, M. (Author) Tanoue, T. (Author) Takahashi, S. (Author) |
| Date: | 1989 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266247 |
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