Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's


Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's. IEEE Transactions on Electron Devices, ED-34, 2027-2033.

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Item Type: Article
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 266252
Date Deposited: 22 Jul 2008 10:56
Last Modified: 02 Mar 2012 13:21
Contributors: Mizuta, Hiroshi (Author)
Yamaguchi, K. (Author)
Takahashi, S. (Author)
Date: 1987
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266252

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