Transient response analysis of programming/readout characteristics for NEMS memory
Nagami, T. , Tsuchiya, Yoshishige, Matsuda, S. , Saito, S. , Arai, T. , Shimada, T. , Mizuta, Hiroshi and Oda, S. (2008) Transient response analysis of programming/readout characteristics for NEMS memory. At IEEE Silicon Nanoelectronics Workshop, Honolulu, , M0430.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: June 2008 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266265 |
| Date Deposited: | 23 Jul 2008 09:02 |
| Last Modified: | 26 Apr 2013 04:22 |
| Contributors: | Nagami, T. (Author) Tsuchiya, Yoshishige (Author) Matsuda, S. (Author) Saito, S. (Author) Arai, T. (Author) Shimada, T. (Author) Mizuta, Hiroshi (Author) Oda, S. (Author) |
| Date: | June 2008 |
| Additional Information: | Event Dates: June 2008 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/266265 |
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