Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices
Kamiya, T., Furuta, Y., Tan, Y. -T., Durrani, Z. A. K., Mizuta, Hiroshi and Ahmed, H. (2002) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices. At The International Conference of Polycrystalline Semiconductors 2002, Nara, , p 11.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: September 2002 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266357 |
| Date Deposited: | 25 Jul 2008 09:26 |
| Last Modified: | 02 Mar 2012 14:04 |
| Contributors: | Kamiya, T. (Author) Furuta, Y. (Author) Tan, Y. -T. (Author) Durrani, Z. A. K. (Author) Mizuta, Hiroshi (Author) Ahmed, H. (Author) |
| Date: | September 2002 |
| Additional Information: | Event Dates: September 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266357 |
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