High Quality Schottky Contacts for Limiting Leakage Currents in Ge Based Schottky Barrier MOSFETs


Husain, M. K., Li, X. and De Groot, C. H. (2009) High Quality Schottky Contacts for Limiting Leakage Currents in Ge Based Schottky Barrier MOSFETs. IEEE Transactions on Electron Devices, 56, (3), 499-504.

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Description/Abstract

Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266961
Date Deposited: 02 Dec 2008 20:22
Last Modified: 27 Mar 2014 20:12
Publisher: IEEE Electron Devices Society
Further Information:Google Scholar
ISI Citation Count:8
URI: http://eprints.soton.ac.uk/id/eprint/266961

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