Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 µerms Hz-1/2 at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures
4648-4652
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
2008
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi
(2008)
Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K.
Nano Letters, 8 (12), .
(doi:10.1021/nl801992j).
Abstract
A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 µerms Hz-1/2 at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures
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Published date: 2008
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Imported from ISI Web of Science
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 266988
URI: http://eprints.soton.ac.uk/id/eprint/266988
ISSN: 1530-6984
PURE UUID: 7943d40a-3872-4222-ad97-91a9f5d267f2
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Date deposited: 17 Dec 2008 16:03
Last modified: 14 Mar 2024 08:39
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Author:
M Manoharan
Author:
Yoshishige Tsuchiya
Author:
S Oda
Author:
Hiroshi Mizuta
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