VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS
Hall, S., Tan, L., Buiu, O. , Hakim, M. M. A., Uchino, T., Ashburn, P. and White, W. Redman- (2007) VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS. In, International Semiconductor Conference, CAS
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Description/Abstract
Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFETfor a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presented to validate the proposals. The devices are particularly suited to radio frequency application.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: 17, September |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 267244 |
| Date Deposited: | 01 Apr 2009 16:04 |
| Last Modified: | 21 Aug 2012 04:27 |
| Contributors: | Hall, S. (Author) Tan, L. (Author) Buiu, O. (Author) Hakim, M. M. A. (Author) Uchino, T. (Author) Ashburn, P. (Author) White, W. Redman- (Author) |
| Date: | 17 September 2007 |
| Additional Information: | Event Dates: 17, September |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/267244 |
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