A self-aligned silicidation technology for surround-gate vertical MOSFETS
Hakim, M.M.A. , Mallik, K. , de-Groot, C.H. , Redman-White, W, Tan, L., Hall, S. and Ashburn, P. (2009) A self-aligned silicidation technology for surround-gate vertical MOSFETS. At 39th European Solid-State Device Research Conference (ESSDERC 2009), Athens, GR, 14 - 18 Sep 2009.
Download
Full text not available from this repository.
Description/Abstract
We report for the first time a silicidation technology for surround gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for the silicidation. Silicided 120 nm n-channel devices show a 30% improvement in drive current in comparison to non silicided devices, but this is accompanied by a small degradation in sub-threshold slope and DIBL. This problem is solved using a frame gate architecture in which the pillar sidewalls are protected from the silicidation process. Silicided frame gate transistors show a similar increase in drive current without any significant degradation of sub-threshold slope or DIBL. For a 120 nm channel length, silicided frame gate vertical nMOSFETs show a 30% improvement in the drive current with an excellent sub-threshold slope of 78mV/decade and a DIBL of 30 mV/V. For an 80 nm channel length, a 43% improvement in the drive current is obtained.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 267566 |
| Date Deposited: | 15 Jun 2009 12:40 |
| Last Modified: | 02 May 2012 12:05 |
| Contributors: | Hakim, M.M.A. (Author) Mallik, K. (Author) de-Groot, C.H. (Author) Redman-White, W (Author) Tan, L. (Author) Hall, S. (Author) Ashburn, P. (Author) |
| Date: | 17 September 2009 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/267566 |
Actions (login required)
 |
View Item |
