Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors
Uchino, Takashi, Ayre, G., Smith, D. C., Hutchison, J. L., Groot, C. H. de and Ashburn, Peter (2011) Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors. Electrochemical and Solid-State Letters, 14, (4), K21-K23.
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Description/Abstract
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.
| Item Type: | Article |
|---|---|
| ISSNs: | 10114913534829 |
| Keywords: | annealing, carbon nanotubes, chemical vapour deposition, elemental semiconductors, field effect transistors, germanium, nanofabrication, nanoparticles, Raman spectra, semiconductor growth, semiconductor nanotubes |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 272001 |
| Date Deposited: | 10 Feb 2011 09:24 |
| Last Modified: | 02 Mar 2012 13:21 |
| Contributors: | Uchino, Takashi (Author) Ayre, G. (Author) Smith, D. C. (Author) Hutchison, J. L. (Author) Groot, C. H. de (Author) Ashburn, Peter (Author) |
| Date: | 8 February 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/272001 |
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