Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator


Alkhalil, F. M., Husain, M. K., Lin, Y. P., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2011) Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator. At Quantum information processing and communication international conference at ETH Zurich, Zurich, 05 - 09 Sep 2011. (Submitted).

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Description/Abstract

This work presents a Si-based double spin qubit device integrated with a single electron electrometer and a u-ESR. Structural design and analysis was performed using 3D FEM simulations, dynamical analysis of single electron turnstile operation is demonstrated using Monte Carlo single electron simula- tions [1]. The spin qubits and the electrometer are realized as SOI nanowires (NWs) with an upper metal gate, which induces an inversion layer in the NW channels, and multiple lower Poly-Si control gates to enable single electron turnstile operations. The device was successfully fabricated using e-beam lithography with subsequent pattern transfer by deposition and dry etching.

Item Type: Conference or Workshop Item (Poster)
Additional Information: Event Dates: September 5-9, 2011
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 272690
Date Deposited: 21 Aug 2011 23:19
Last Modified: 02 Mar 2012 13:22
Contributors: Alkhalil, F. M. (Author)
Husain, M. K. (Author)
Lin, Y. P. (Author)
Chong, H. M. H. (Author)
Ferguson, A. J. (Author)
Tsuchiya, Y. (Author)
Mizuta, H. (Author)
Date: 4 September 2011
Additional Information: Event Dates: September 5-9, 2011
Status: Submitted
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/272690

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