Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator

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Description/Abstract

This paper presents the design and analysis of a Sibased integrated spin qubit system on ultrathin silicon-oninsulator. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a μ-ESR and a nanomagnet. Three dimensional FEM simulations are performed to calculate the capacitance parameters among quantum dots and other building blocks for the proposed structure. Monte Carlo based single electron circuit simulation is then performed to demonstrate single electron transfer operation. The single electron transfer characteristics are analyzed and used to optimize the system structural parameters and layout.