Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications
Schmidt, Marek E., Johari, Z., Ismail, R., Mizuta, Hiroshi and Chong, H.M.H. (2011) Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications. At Micro and Nano Engineering , Berlin, Germany, 19 - 23 Sep 2011.
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Description/Abstract
We demonstrate a rapid-prototyping method for the fabrication of electrical structures from exfoliated graphene using focused ion beam (FIB) assisted deposition of tungsten and milling. Alignment accuracies of less than 250 nm are achieved without imaging of the graphene using the FIB beam. Parameters for the FIB assisted deposition on graphene have to be controlled exactly to avoid damage to the underlying graphene. Measured channel resistance of 58 kΩ shows a good electrical contact between deposited tungsten and graphene.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 19-23 September 2011 |
| Related URLs: | |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272934 |
| Date Deposited: | 17 Oct 2011 08:28 |
| Last Modified: | 01 May 2012 11:06 |
| Contributors: | Schmidt, Marek E. (Author) Johari, Z. (Author) Ismail, R. (Author) Mizuta, Hiroshi (Author) Chong, H.M.H. (Author) |
| Date: | 19 September 2011 |
| Additional Information: | Event Dates: 19-23 September 2011 |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272934 |
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