The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device
The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550 degrees C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature.
tunnel transistors, titanium dioxide, Fowler-Nordheim tunneling
171-180
Chong, Lit Ho
73bcd3b8-6d70-404a-94a2-da029feabfa9
Mallik, Kanad
448531b6-8c3f-4326-87db-2ae1de37a6fb
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
August 2005
Chong, Lit Ho
73bcd3b8-6d70-404a-94a2-da029feabfa9
Mallik, Kanad
448531b6-8c3f-4326-87db-2ae1de37a6fb
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Chong, Lit Ho, Mallik, Kanad and de Groot, C. H.
(2005)
The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device.
Microelectronic Engineering, 81 (2-4), .
Abstract
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550 degrees C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature.
Text
me81_171.pdf
- Other
More information
Published date: August 2005
Keywords:
tunnel transistors, titanium dioxide, Fowler-Nordheim tunneling
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262678
URI: http://eprints.soton.ac.uk/id/eprint/262678
ISSN: 0167-9317
PURE UUID: 2637a32d-59e2-4677-82c3-e255ec2e53fd
Catalogue record
Date deposited: 06 Jun 2006
Last modified: 15 Mar 2024 03:11
Export record
Contributors
Author:
Lit Ho Chong
Author:
Kanad Mallik
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
