The University of Southampton
University of Southampton Institutional Repository

Effect of nanotopogranphy in direct wafer bonding: modeling and measurements

Effect of nanotopogranphy in direct wafer bonding: modeling and measurements
Effect of nanotopogranphy in direct wafer bonding: modeling and measurements
Nanotopography, which refers to surface height variations of tens to hundreds of nanometers that extend across millimeter-scale wavelengths, is a wafer geometry feature that may cause failure in direct wafer bonding processes. In this work, the nanotopography that is acceptable in direct bonding is determined using mechanics-based models that compare the elastic strain energy accumulated in the wafer during bonding to the work of adhesion. The modeling results are presented in the form of design maps that show acceptable magnitudes of height variations as a function of spatial wavelength. The influence of nanotopography in the bonding of prime grade silicon wafers is then assessed through a combination of measurements and analysis. Nanotopography measurements on three 150-mm silicon wafers, which were manufactured using different polishing processes, are reported and analyzed. Several different strategies are used to compare the wafers in terms of bondability and to assess the impact of the measured nanotopography in direct bonding. The measurement and analysis techniques reported here provide a general route for assessing the impact of nanotopography in direct bonding and can be employed when evaluating different processes to manufacture wafers for bonded devices or substrates.
lead bonding, nanotechnology, semiconductor process modelling, surface topography measurement
0894-6507
289-296
Turner, K.T.
a2157f89-3a3c-4712-977f-a42723316d36
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Baylies, W.A.
571c1311-f018-4577-ac8b-4b0d2c6abcc1
Robinson, M.
967f55db-5b3c-46a3-8ea0-2e7c01de71f0
Smythe, R.
89e0b555-420a-44d6-8a66-4b026313bb0e
Turner, K.T.
a2157f89-3a3c-4712-977f-a42723316d36
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Baylies, W.A.
571c1311-f018-4577-ac8b-4b0d2c6abcc1
Robinson, M.
967f55db-5b3c-46a3-8ea0-2e7c01de71f0
Smythe, R.
89e0b555-420a-44d6-8a66-4b026313bb0e

Turner, K.T., Spearing, S.M., Baylies, W.A., Robinson, M. and Smythe, R. (2005) Effect of nanotopogranphy in direct wafer bonding: modeling and measurements. IEEE Transactions on Semiconductor Manufacturing, 18 (2), 289-296. (doi:10.1109/TSM.2005.845009).

Record type: Article

Abstract

Nanotopography, which refers to surface height variations of tens to hundreds of nanometers that extend across millimeter-scale wavelengths, is a wafer geometry feature that may cause failure in direct wafer bonding processes. In this work, the nanotopography that is acceptable in direct bonding is determined using mechanics-based models that compare the elastic strain energy accumulated in the wafer during bonding to the work of adhesion. The modeling results are presented in the form of design maps that show acceptable magnitudes of height variations as a function of spatial wavelength. The influence of nanotopography in the bonding of prime grade silicon wafers is then assessed through a combination of measurements and analysis. Nanotopography measurements on three 150-mm silicon wafers, which were manufactured using different polishing processes, are reported and analyzed. Several different strategies are used to compare the wafers in terms of bondability and to assess the impact of the measured nanotopography in direct bonding. The measurement and analysis techniques reported here provide a general route for assessing the impact of nanotopography in direct bonding and can be employed when evaluating different processes to manufacture wafers for bonded devices or substrates.

Text
23283.pdf - Version of Record
Download (967kB)

More information

Published date: 2005
Keywords: lead bonding, nanotechnology, semiconductor process modelling, surface topography measurement

Identifiers

Local EPrints ID: 23283
URI: http://eprints.soton.ac.uk/id/eprint/23283
ISSN: 0894-6507
PURE UUID: 9b67472f-06f8-4200-91a3-5a0f92084b47
ORCID for S.M. Spearing: ORCID iD orcid.org/0000-0002-3059-2014

Catalogue record

Date deposited: 13 Mar 2006
Last modified: 16 Mar 2024 03:37

Export record

Altmetrics

Contributors

Author: K.T. Turner
Author: S.M. Spearing ORCID iD
Author: W.A. Baylies
Author: M. Robinson
Author: R. Smythe

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×