Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology. IEEE Transactions on Electron Devices, 44, 715-722.
Record type:
Article
More information
Published date: 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250930
URI: http://eprints.soton.ac.uk/id/eprint/250930
PURE UUID: 2dfb6a44-d3e5-4417-9327-9c4fcac61d7f
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Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:06
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Contributors
Author:
B Le Tron
Author:
M D R Hashim
Author:
P Ashburn
Author:
M Mouis
Author:
A Chantre
Author:
G Vincent
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