Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology


Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology IEEE Transactions on Electron Devices, 44, pp. 715-722.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250930
Date :
Date Event
1997Published
Date Deposited: 06 Jan 2004
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250930

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