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Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology
Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology
715-722
Tron, B Le
8734f911-4acc-4f15-9802-af53da3eb223
Hashim, M D R
dc30dac8-eef1-44c7-a3af-5b01a27e61ea
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mouis, M
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Chantre, A
0535d54c-1aa6-484f-af55-4f412aab911b
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Tron, B Le
8734f911-4acc-4f15-9802-af53da3eb223
Hashim, M D R
dc30dac8-eef1-44c7-a3af-5b01a27e61ea
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Chantre, A
0535d54c-1aa6-484f-af55-4f412aab911b
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78

Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology. IEEE Transactions on Electron Devices, 44, 715-722.

Record type: Article
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More information

Published date: 1997
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250930
URI: http://eprints.soton.ac.uk/id/eprint/250930
PURE UUID: 2dfb6a44-d3e5-4417-9327-9c4fcac61d7f

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Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:06

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Contributors

Author: B Le Tron
Author: M D R Hashim
Author: P Ashburn
Author: M Mouis
Author: A Chantre
Author: G Vincent

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