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Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

Marsh, C.D., Moiseiwitsch, N.E., Booker, G.R. and Ashburn, P. (2000) Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers Journal of Applied Physics, 87, (10), pp. 7567-7578.

Record type: Article


A comprehensive study is made of the behaviour and effects of fluorine in n+ polysilicon layers. Sheet resistance, TEM and SIMS are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted and a value of approximately 6x1011cm2s-1 is deduced for the effective diffusivity of fluorine in polysilicon at 950°C.

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Published date: 2000
Additional Information: Organisation: American Institute of Physics
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 253692
ISSN: 0021-8979
PURE UUID: e24240f4-9971-4108-a88b-106bbf44b795

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Date deposited: 06 Jan 2004
Last modified: 18 Jul 2017 09:56

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Author: C.D. Marsh
Author: N.E. Moiseiwitsch
Author: G.R. Booker
Author: P. Ashburn

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