SiGe HBTs on Bonded Wafer Substrates
SiGe HBTs on Bonded Wafer Substrates
Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator substrates. The devices have application in low power, radio-frequency electronics. The transistors were fabricated on bonded substrates incorporating poly-Si filled, deeptrench isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for the layers. Experimental transistors exhibit good uniformity across the wafers and collector currents are seen to be ideal, showing the expected enhancement for the SiGe devices compared to Si. Anomalies in device characteristics at high current levels are investigated.
449-454
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Lamb, A. C.
89571b4c-7c59-47e8-9325-e85e0d70a407
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
Armstrong, B. M.
976b6168-a4da-42bc-9364-52804c712801
Gamble, H.
de02414c-a134-4046-a7e1-66b12bba78f6
Murabek, H. A. W.
9586aabb-0741-4d9a-9efc-e1e077b42909
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2001
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Lamb, A. C.
89571b4c-7c59-47e8-9325-e85e0d70a407
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
Armstrong, B. M.
976b6168-a4da-42bc-9364-52804c712801
Gamble, H.
de02414c-a134-4046-a7e1-66b12bba78f6
Murabek, H. A. W.
9586aabb-0741-4d9a-9efc-e1e077b42909
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S., Lamb, A. C., Bain, M., Armstrong, B. M., Gamble, H., Murabek, H. A. W. and Ashburn, P.
(2001)
SiGe HBTs on Bonded Wafer Substrates.
Microelectronic Engineering, 59, .
Abstract
Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator substrates. The devices have application in low power, radio-frequency electronics. The transistors were fabricated on bonded substrates incorporating poly-Si filled, deeptrench isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for the layers. Experimental transistors exhibit good uniformity across the wafers and collector currents are seen to be ideal, showing the expected enhancement for the SiGe devices compared to Si. Anomalies in device characteristics at high current levels are investigated.
Text
HBTs_on_SOI.pdf
- Other
More information
Published date: 2001
Additional Information:
Organisation: INFOS
Venue - Dates:
conference; 2001-01-01, 2001-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 256161
URI: http://eprints.soton.ac.uk/id/eprint/256161
ISSN: 0167-9317
PURE UUID: 4da71fc8-35ad-4753-9ba1-25f8117aba52
Catalogue record
Date deposited: 22 Dec 2003
Last modified: 14 Mar 2024 05:39
Export record
Contributors
Author:
S. Hall
Author:
A. C. Lamb
Author:
M. Bain
Author:
B. M. Armstrong
Author:
H. Gamble
Author:
H. A. W. Murabek
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics