Silicon resonant strain gauges fabricated using SOI wafers
Beeby, S. P., White, N. M. and Ensell, G. (2000) Silicon resonant strain gauges fabricated using SOI wafers At Demonstrated Micromachining Technologies for Industry, United Kingdom. , 2/1-4.
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This paper details the design and fabrication process for a dynamically balanced silicon resonator. To optimise the degree of dynamic balance extensive finite element modelling (FEM) of the mechanical structure was carried out. A method of driving and detecting the optimum mode of the resonator was chosen in order to avoid compromising the mechanical design of the structure. The degree of dynamic balance has important implications for the use of the resonator in strain sensing applications. In the fabrication process silicon-on-insulator (SOI) wafers are used that enable the manufacture of the resonator in single-crystal silicon. This is an ideal mechanical material for such an application and is mechanically superior to polysilicon with wholly repeatable material properties. The fabrication process described in this paper has been designed to be relatively straightforward, thereby enabling the application of resonant strain gauges to a wide range of devices.
|Item Type:||Conference or Workshop Item (Other)|
|Additional Information:||Event Dates: 29 March 2000 Organisation: Proceedings of IEE Colloquium "Demonstrated micromachining technologies for industry" Address: London|
|Venue - Dates:||Demonstrated Micromachining Technologies for Industry, United Kingdom, 2000-03-29
|Date Deposited:||06 May 2003|
|Last Modified:||17 Apr 2017 22:52|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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Silicon resonant strain gauges fabricated using SOI wafers (deposited 05 Jul 2001)
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