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Silicon resonant strain gauges fabricated using SOI wafers

Beeby, S. P., White, N. M. and Ensell, G. (2000) Silicon resonant strain gauges fabricated using SOI wafers At Demonstrated Micromachining Technologies for Industry, United Kingdom. , 2/1-4.

Record type: Conference or Workshop Item (Other)


This paper details the design and fabrication process for a dynamically balanced silicon resonator. To optimise the degree of dynamic balance extensive finite element modelling (FEM) of the mechanical structure was carried out. A method of driving and detecting the optimum mode of the resonator was chosen in order to avoid compromising the mechanical design of the structure. The degree of dynamic balance has important implications for the use of the resonator in strain sensing applications. In the fabrication process silicon-on-insulator (SOI) wafers are used that enable the manufacture of the resonator in single-crystal silicon. This is an ideal mechanical material for such an application and is mechanically superior to polysilicon with wholly repeatable material properties. The fabrication process described in this paper has been designed to be relatively straightforward, thereby enabling the application of resonant strain gauges to a wide range of devices.

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Published date: March 2000
Additional Information: Event Dates: 29 March 2000 Organisation: Proceedings of IEE Colloquium "Demonstrated micromachining technologies for industry" Address: London
Venue - Dates: Demonstrated Micromachining Technologies for Industry, United Kingdom, 2000-03-29
Organisations: EEE


Local EPrints ID: 257401
PURE UUID: 02f11374-1d2d-4cf0-90cb-5ba705a53e5d
ORCID for S. P. Beeby: ORCID iD
ORCID for N. M. White: ORCID iD

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Date deposited: 06 May 2003
Last modified: 18 Jul 2017 09:39

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Author: S. P. Beeby ORCID iD
Author: N. M. White ORCID iD
Author: G. Ensell

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