Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors
Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors
171-174
Kunz, V.D.
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de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, S.
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Anteney, I.M.
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Abdul-Rahim, AI
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Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2002
Kunz, V.D.
c21549be-6367-48d6-bec7-ea23112654a9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, S.
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Anteney, I.M.
a6ff36e1-8941-4911-9bf0-f005fd8ea2aa
Abdul-Rahim, AI
feedf892-692d-4480-a433-af69ddd91206
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kunz, V.D., de Groot, C.H., Hall, S., Anteney, I.M., Abdul-Rahim, AI and Ashburn, P.
(2002)
Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors.
ESSDERC 2002, Florence.
.
Record type:
Conference or Workshop Item
(Other)
More information
Published date: 2002
Venue - Dates:
ESSDERC 2002, Florence, 2002-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 257764
URI: http://eprints.soton.ac.uk/id/eprint/257764
PURE UUID: f8b0fde6-de91-4831-b7c4-8dab500bc484
Catalogue record
Date deposited: 08 Mar 2004
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
V.D. Kunz
Author:
S. Hall
Author:
I.M. Anteney
Author:
AI Abdul-Rahim
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