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Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors

Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors
Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors
171-174
Kunz, V.D.
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de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, S.
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Anteney, I.M.
a6ff36e1-8941-4911-9bf0-f005fd8ea2aa
Abdul-Rahim, AI
feedf892-692d-4480-a433-af69ddd91206
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kunz, V.D.
c21549be-6367-48d6-bec7-ea23112654a9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, S.
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Anteney, I.M.
a6ff36e1-8941-4911-9bf0-f005fd8ea2aa
Abdul-Rahim, AI
feedf892-692d-4480-a433-af69ddd91206
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kunz, V.D., de Groot, C.H., Hall, S., Anteney, I.M., Abdul-Rahim, AI and Ashburn, P. (2002) Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors. ESSDERC 2002. pp. 171-174 .

Record type: Conference or Workshop Item (Other)
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More information

Published date: 2002
Venue - Dates: ESSDERC 2002, 2002-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 257764
URI: http://eprints.soton.ac.uk/id/eprint/257764
PURE UUID: f8b0fde6-de91-4831-b7c4-8dab500bc484
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 08 Mar 2004
Last modified: 10 Dec 2019 01:48

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Contributors

Author: V.D. Kunz
Author: C.H. de Groot ORCID iD
Author: S. Hall
Author: I.M. Anteney
Author: AI Abdul-Rahim
Author: P. Ashburn

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