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Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine

Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine
Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluroinated devices retaining the initial improvement observed in the forward-bias base current, which is due to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface. The benefits of fluorination and particularly the reduction in base current in fluorinated devices, appear to be robust - that is, there is no evidence that the defects passivated by flurine are reactivated during stressing, or that fluorination introduces additional defects that are activated under stressing.
Fluorination, hot carriers, polysilicon bipolar junction transistor (BJT), reliability
1141-1144
Sheng, S R
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McKinnon, W R
2ddb19a3-90a3-4928-92d8-b57620e1c101
McAlister, S P
ee283013-fc40-4e35-969e-05726ae0a4e5
Storey, C
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Hamel, J S
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sheng, S R
9b8bc91b-2124-43e3-8649-40d4b60b5fb1
McKinnon, W R
2ddb19a3-90a3-4928-92d8-b57620e1c101
McAlister, S P
ee283013-fc40-4e35-969e-05726ae0a4e5
Storey, C
f0392878-3cd6-47f1-a1c4-e1f9c5159d4e
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sheng, S R, McKinnon, W R, McAlister, S P, Storey, C, Hamel, J S and Ashburn, P (2003) Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine. IEEE Transactions on Electron Devices, 50 (4), 1141-1144.

Record type: Article

Abstract

The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluroinated devices retaining the initial improvement observed in the forward-bias base current, which is due to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface. The benefits of fluorination and particularly the reduction in base current in fluorinated devices, appear to be robust - that is, there is no evidence that the defects passivated by flurine are reactivated during stressing, or that fluorination introduces additional defects that are activated under stressing.

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Published date: April 2003
Keywords: Fluorination, hot carriers, polysilicon bipolar junction transistor (BJT), reliability
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258036
URI: http://eprints.soton.ac.uk/id/eprint/258036
PURE UUID: 11abb958-1d51-4442-a47f-2f0de24d3392

Catalogue record

Date deposited: 22 Dec 2003
Last modified: 19 Jul 2019 22:43

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Contributors

Author: S R Sheng
Author: W R McKinnon
Author: S P McAlister
Author: C Storey
Author: J S Hamel
Author: P Ashburn

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