Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs
Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs
This paper investigates germanium incorporation into polysilicon emitters for gain control in SiGe heterjunction bipolar transistors. A theory for the base current of a polySiGe emitter is developed, which combines the effects of the polySiGe grains, the grain boundaries and the interfacial layer at the polySiGe/Si interface into an expression for the effective surface recombination velocity of a polySiGe emitter. Silicon bipolar transistors are fabricated with 0,10 and 19 percent Ge clmpared with a control transistor containing no germanium. These values are in good agreement with the theoretical predictions. The competing mechanisms of base current increase by Ge incorporation into the polysilicon and base current decrease due to an interfacial oxide layer are investigated.
Bipolar transistors, polysilicon emitters, SiGe, SiGe HBTs, SiGe heterjunction bipolar transistors
1480-1486
Kunz, V Dominik
6f1151e3-be12-436f-8a65-7a47ca8640c9
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, Steven
b11370a5-759c-478b-8ba2-ad04140dc4fd
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
June 2003
Kunz, V Dominik
6f1151e3-be12-436f-8a65-7a47ca8640c9
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, Steven
b11370a5-759c-478b-8ba2-ad04140dc4fd
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kunz, V Dominik, de Groot, C H, Hall, Steven and Ashburn, Peter
(2003)
Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs.
IEEE Transactions on Electron Devices, 50 (6), .
Abstract
This paper investigates germanium incorporation into polysilicon emitters for gain control in SiGe heterjunction bipolar transistors. A theory for the base current of a polySiGe emitter is developed, which combines the effects of the polySiGe grains, the grain boundaries and the interfacial layer at the polySiGe/Si interface into an expression for the effective surface recombination velocity of a polySiGe emitter. Silicon bipolar transistors are fabricated with 0,10 and 19 percent Ge clmpared with a control transistor containing no germanium. These values are in good agreement with the theoretical predictions. The competing mechanisms of base current increase by Ge incorporation into the polysilicon and base current decrease due to an interfacial oxide layer are investigated.
Text
2003_poly_SiGe_paper.pdf
- Other
More information
Published date: June 2003
Keywords:
Bipolar transistors, polysilicon emitters, SiGe, SiGe HBTs, SiGe heterjunction bipolar transistors
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 258688
URI: http://eprints.soton.ac.uk/id/eprint/258688
PURE UUID: cc499678-28bb-46bb-a009-cb2f23dda2f2
Catalogue record
Date deposited: 10 Mar 2004
Last modified: 15 Mar 2024 03:11
Export record
Contributors
Author:
V Dominik Kunz
Author:
Steven Hall
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
