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Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs

Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs
Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs
This paper investigates germanium incorporation into polysilicon emitters for gain control in SiGe heterjunction bipolar transistors. A theory for the base current of a polySiGe emitter is developed, which combines the effects of the polySiGe grains, the grain boundaries and the interfacial layer at the polySiGe/Si interface into an expression for the effective surface recombination velocity of a polySiGe emitter. Silicon bipolar transistors are fabricated with 0,10 and 19 percent Ge clmpared with a control transistor containing no germanium. These values are in good agreement with the theoretical predictions. The competing mechanisms of base current increase by Ge incorporation into the polysilicon and base current decrease due to an interfacial oxide layer are investigated.
Bipolar transistors, polysilicon emitters, SiGe, SiGe HBTs, SiGe heterjunction bipolar transistors
1480-1486
Kunz, V Dominik
6f1151e3-be12-436f-8a65-7a47ca8640c9
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, Steven
b11370a5-759c-478b-8ba2-ad04140dc4fd
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kunz, V Dominik
6f1151e3-be12-436f-8a65-7a47ca8640c9
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Hall, Steven
b11370a5-759c-478b-8ba2-ad04140dc4fd
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kunz, V Dominik, de Groot, C H, Hall, Steven and Ashburn, Peter (2003) Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs. IEEE Transactions on Electron Devices, 50 (6), 1480-1486.

Record type: Article

Abstract

This paper investigates germanium incorporation into polysilicon emitters for gain control in SiGe heterjunction bipolar transistors. A theory for the base current of a polySiGe emitter is developed, which combines the effects of the polySiGe grains, the grain boundaries and the interfacial layer at the polySiGe/Si interface into an expression for the effective surface recombination velocity of a polySiGe emitter. Silicon bipolar transistors are fabricated with 0,10 and 19 percent Ge clmpared with a control transistor containing no germanium. These values are in good agreement with the theoretical predictions. The competing mechanisms of base current increase by Ge incorporation into the polysilicon and base current decrease due to an interfacial oxide layer are investigated.

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Published date: June 2003
Keywords: Bipolar transistors, polysilicon emitters, SiGe, SiGe HBTs, SiGe heterjunction bipolar transistors
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 258688
URI: http://eprints.soton.ac.uk/id/eprint/258688
PURE UUID: cc499678-28bb-46bb-a009-cb2f23dda2f2
ORCID for C H de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 10 Mar 2004
Last modified: 29 Oct 2019 01:55

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