Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R. and Ashburn, P. (2005) Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. Solid-State Electronics, 49, 529-534.
Record type:
Article
More information
Published date: 2005
Keywords:
Elevated source/drain, selective epitaxy, epitaxy, CMOS
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260748
URI: http://eprints.soton.ac.uk/id/eprint/260748
ISSN: 0038-1101
PURE UUID: b9ae52a9-939d-4f37-93ea-017c754dc9fc
Catalogue record
Date deposited: 14 Apr 2005
Last modified: 14 Mar 2024 06:42
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Contributors
Author:
A.M. Waite
Author:
N.S. Lloyd
Author:
K. Osman
Author:
W. Zhang
Author:
T. Ernst
Author:
H. Achard
Author:
Y. Wang
Author:
S. Deleonibus
Author:
P.L.F. Hemment
Author:
D.M. Bagnall
Author:
A.G.R. Evans
Author:
P. Ashburn
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