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Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy

Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy
Elevated source/drain, selective epitaxy, epitaxy, CMOS
0038-1101
529-534
Waite, A.M.
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Lloyd, N.S.
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Osman, K.
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Zhang, W.
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Ernst, T.
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Achard, H.
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Wang, Y.
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Deleonibus, S.
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Hemment, P.L.F.
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Bagnall, D.M.
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Evans, A.G.R.
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Ashburn, P.
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Waite, A.M.
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Lloyd, N.S.
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Osman, K.
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Zhang, W.
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Ernst, T.
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Achard, H.
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Wang, Y.
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Deleonibus, S.
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Hemment, P.L.F.
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Bagnall, D.M.
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Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R. and Ashburn, P. (2005) Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. Solid-State Electronics, 49, 529-534.

Record type: Article
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More information

Published date: 2005
Keywords: Elevated source/drain, selective epitaxy, epitaxy, CMOS
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260748
URI: http://eprints.soton.ac.uk/id/eprint/260748
ISSN: 0038-1101
PURE UUID: b9ae52a9-939d-4f37-93ea-017c754dc9fc

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 14 Mar 2024 06:42

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Contributors

Author: A.M. Waite
Author: N.S. Lloyd
Author: K. Osman
Author: W. Zhang
Author: T. Ernst
Author: H. Achard
Author: Y. Wang
Author: S. Deleonibus
Author: P.L.F. Hemment
Author: D.M. Bagnall
Author: A.G.R. Evans
Author: P. Ashburn

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