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Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy

Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy
Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy
Elevated source/drain, selective epitaxy, epitaxy, CMOS
0038-1101
529-534
Waite, A.M.
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Lloyd, N.S.
0c5edf73-bc40-43ed-9737-ebf3b5863c49
Osman, K.
1f9a05a0-e0d4-4442-80c5-52c378b139e4
Zhang, W.
1c80d4f2-4ba8-41f6-85a6-a76a4d65dc9b
Ernst, T.
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Achard, H.
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Wang, Y.
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Deleonibus, S.
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Hemment, P.L.F.
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Bagnall, D.M.
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Evans, A.G.R.
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Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Waite, A.M.
3badd40f-fa77-443f-8c8c-baede8a20dbd
Lloyd, N.S.
0c5edf73-bc40-43ed-9737-ebf3b5863c49
Osman, K.
1f9a05a0-e0d4-4442-80c5-52c378b139e4
Zhang, W.
1c80d4f2-4ba8-41f6-85a6-a76a4d65dc9b
Ernst, T.
7b376e62-a796-419d-9c55-deda2770675f
Achard, H.
7447a155-6263-4d00-993a-0d8964c859da
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Deleonibus, S.
fd67d830-457c-4a0e-bd47-814516103b67
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R. and Ashburn, P. (2005) Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. Solid State Electronics, 49, 529-534.

Record type: Article
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More information

Published date: 2005
Keywords: Elevated source/drain, selective epitaxy, epitaxy, CMOS
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260748
URI: https://eprints.soton.ac.uk/id/eprint/260748
ISSN: 0038-1101
PURE UUID: b9ae52a9-939d-4f37-93ea-017c754dc9fc

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 18 Jul 2017 09:09

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