Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs
Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs
131-134
Hakim, M. M. A.
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de Groot, C.H.
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Gili, E.
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Uchino, T.
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Hall, S.
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Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
April 2005
Hakim, M. M. A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gili, E.
6e227036-b8f4-4364-a0ce-28c3899294b8
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hakim, M. M. A., de Groot, C.H., Gili, E., Uchino, T., Hall, S. and Ashburn, Peter
(2005)
Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs.
6th International Conference on ULtimate Integration of Silicon (ULIS), Bologna, Bologna, Italy.
07 - 08 Apr 2005.
.
Record type:
Conference or Workshop Item
(Poster)
Text
ulis2005MMAHakim.pdf
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More information
Published date: April 2005
Additional Information:
Event Dates: 7-8 April
Venue - Dates:
6th International Conference on ULtimate Integration of Silicon (ULIS), Bologna, Bologna, Italy, 2005-04-07 - 2005-04-08
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260772
URI: http://eprints.soton.ac.uk/id/eprint/260772
PURE UUID: d6ba0d9d-8599-4c9f-8956-5bdb5d860e8f
Catalogue record
Date deposited: 15 Apr 2005
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
M. M. A. Hakim
Author:
E. Gili
Author:
T. Uchino
Author:
S. Hall
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