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Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs

Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs
Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs
131-134
Hakim, M M A
488b9b4c-22d2-4856-b5ec-9d5da0196d17
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Gili, E
68792585-bbb1-4358-a8ca-c1b4b012cb4e
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hakim, M M A
488b9b4c-22d2-4856-b5ec-9d5da0196d17
de Groot, C H
92cd2e02-fcc4-43da-8816-c86f966be90c
Gili, E
68792585-bbb1-4358-a8ca-c1b4b012cb4e
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Hakim, M M A, de Groot, C H, Gili, E, Uchino, T, Hall, S and Ashburn, P (2005) Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs. 6th International Conference on ULtimate Integration of Silicon (ULIS), Italy. 07 - 08 Apr 2005. pp. 131-134 .

Record type: Conference or Workshop Item (Poster)
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More information

Published date: April 2005
Additional Information: Event Dates: 7-8 April
Venue - Dates: 6th International Conference on ULtimate Integration of Silicon (ULIS), Italy, 2005-04-07 - 2005-04-08
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260772
URI: https://eprints.soton.ac.uk/id/eprint/260772
PURE UUID: d6ba0d9d-8599-4c9f-8956-5bdb5d860e8f
ORCID for C H de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Apr 2005
Last modified: 06 Jun 2018 12:50

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Contributors

Author: M M A Hakim
Author: C H de Groot ORCID iD
Author: E Gili
Author: T Uchino
Author: S Hall
Author: P Ashburn

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