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Electrodeposition of Ni-Si Schottky barriers

Electrodeposition of Ni-Si Schottky barriers
Electrodeposition of Ni-Si Schottky barriers
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 Omega(.)cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Omega(.)cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.
electrodeposition, schottky barriers, silicon, spintronics
0018-9464
2639-2641
Kiziroglou, M.E.
5d55ba87-ea00-47fa-917b-c1e538ae6dd2
Zhukov, A.A.
75d64070-ea67-4984-ae75-4d5798cd3c61
Abdelsalam, M.
19db11cd-6edc-4f00-abd0-ff307e986b35
Li, X.L.
b3111d5f-39df-4ba6-8a6c-8665063d24fb
de Groot, P.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
Bartlett, P.N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Kiziroglou, M.E.
5d55ba87-ea00-47fa-917b-c1e538ae6dd2
Zhukov, A.A.
75d64070-ea67-4984-ae75-4d5798cd3c61
Abdelsalam, M.
19db11cd-6edc-4f00-abd0-ff307e986b35
Li, X.L.
b3111d5f-39df-4ba6-8a6c-8665063d24fb
de Groot, P.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
Bartlett, P.N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Kiziroglou, M.E., Zhukov, A.A., Abdelsalam, M., Li, X.L., de Groot, P., Bartlett, P.N. and de Groot, C.H. (2005) Electrodeposition of Ni-Si Schottky barriers. IEEE Transactions on Magnetics, 41 (10), 2639-2641. (doi:10.1109/TMAG.2005.854737).

Record type: Article

Abstract

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 Omega(.)cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Omega(.)cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.

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More information

Published date: 1 October 2005
Additional Information: Event Dates: 4-8 April, 2005
Venue - Dates: The 2005 IEEE International Magnetics Conference (INTERMAG 2005), Japan, 2005-04-04 - 2005-04-08
Keywords: electrodeposition, schottky barriers, silicon, spintronics
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 261491
URI: http://eprints.soton.ac.uk/id/eprint/261491
ISSN: 0018-9464
PURE UUID: 43eada0e-15e0-4ab0-8a0f-0e62b04fe738
ORCID for P.N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 20 Oct 2005
Last modified: 03 Dec 2019 02:04

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Contributors

Author: M.E. Kiziroglou
Author: A.A. Zhukov
Author: M. Abdelsalam
Author: X.L. Li
Author: P. de Groot
Author: P.N. Bartlett ORCID iD
Author: C.H. de Groot ORCID iD

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