A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure
A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure
A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance. However, the device capacitance increases by a significant amount that has the possibility to reduce the switching speed of the devices. Therefore, a trade off is established to reduce RC time constant by changing the thickness of the stacking. The electrical characteristics of a CONVENTIONAL POWER MOSFET having trench contact for the source and body regions are compared with that of our proposed multilayer structure. The device proves itself as a high performance MOSFET with high speed and high storage capacity.
163-166
Hakim, M.M.A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Alam, A.H.M. Zahirul
b163144e-fc12-4ec0-ae5c-a31e0e045ba6
2001
Hakim, M.M.A.
a3ec2cf3-d89c-4ec5-a66f-e718fba3a52d
Alam, A.H.M. Zahirul
b163144e-fc12-4ec0-ae5c-a31e0e045ba6
Hakim, M.M.A. and Alam, A.H.M. Zahirul
(2001)
A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure.
First International Conference on Electrical and Computer Engineering (ICECE 2001), Dhaka, Bangladesh.
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Record type:
Conference or Workshop Item
(Other)
Abstract
A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance. However, the device capacitance increases by a significant amount that has the possibility to reduce the switching speed of the devices. Therefore, a trade off is established to reduce RC time constant by changing the thickness of the stacking. The electrical characteristics of a CONVENTIONAL POWER MOSFET having trench contact for the source and body regions are compared with that of our proposed multilayer structure. The device proves itself as a high performance MOSFET with high speed and high storage capacity.
More information
Published date: 2001
Venue - Dates:
First International Conference on Electrical and Computer Engineering (ICECE 2001), Dhaka, Bangladesh, 2001-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262445
URI: http://eprints.soton.ac.uk/id/eprint/262445
PURE UUID: be9c1c96-cb53-4f22-8dfe-4c8795bc6c68
Catalogue record
Date deposited: 02 May 2006
Last modified: 14 Mar 2024 07:12
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Contributors
Author:
M.M.A. Hakim
Author:
A.H.M. Zahirul Alam
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