The University of Southampton
University of Southampton Institutional Repository

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface.
1080-1087
Gili, E.
6e227036-b8f4-4364-a0ce-28c3899294b8
Kunz, D.
45203734-4f43-4d7b-a6c0-b8df2f39f821
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Gili, E.
6e227036-b8f4-4364-a0ce-28c3899294b8
Kunz, D.
45203734-4f43-4d7b-a6c0-b8df2f39f821
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc

Gili, E., Kunz, D., Uchino, T., Hakim, M.M.A., de Groot, C.H., Ashburn, P. and Hall, S. (2006) Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance. IEEE Transactions on Electron Devices, 53 (5), 1080-1087.

Record type: Article

Abstract

Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface.

Text
2006EnricoGIDL.pdf - Other
Download (491kB)

More information

Published date: May 2006
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262739
URI: http://eprints.soton.ac.uk/id/eprint/262739
PURE UUID: bd71d106-bcd1-4d90-9d7b-f13854b2d1d0
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 22 Jun 2006
Last modified: 12 Nov 2019 01:51

Export record

Contributors

Author: E. Gili
Author: D. Kunz
Author: T. Uchino
Author: M.M.A. Hakim
Author: C.H. de Groot ORCID iD
Author: P. Ashburn
Author: S. Hall

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×