Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge
Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge
1410-1412
Ogi, J.
26525fdb-b4f6-4818-a74c-e9a3413689bd
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
2008
Ogi, J.
26525fdb-b4f6-4818-a74c-e9a3413689bd
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ogi, J., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi
(2008)
Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge.
Microelectronic Engineering, 85 (5-6), .
(doi:10.1016/j.mee.2008.01.068).
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paper_87.pdf
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Published date: 2008
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266171
URI: http://eprints.soton.ac.uk/id/eprint/266171
ISSN: 0167-9317
PURE UUID: e5e26c70-b83a-4713-86f3-6819e9ff04c5
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Date deposited: 21 Jul 2008 14:37
Last modified: 14 Mar 2024 08:21
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Contributors
Author:
J. Ogi
Author:
Yoshishige Tsuchiya
Author:
S. Oda
Author:
Hiroshi Mizuta
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