Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation
Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation
This paper reports the observation of stochastic Coulomb blockade for the coupled silicon dots. The device was fabricated from the highly doped dual recess structured silicon channel by means of stress induced pattern-dependent oxidation. Sparsely placed Coulomb oscillation characteristics were observed from the transport characteristics at a low temperature and these irregularities decreased linearly as temperature increased. These characteristics were interpreted as the stochastic Coulomb blockade effect, which occurs due to the mismatch between individual dots in the energy spectrum ladder of the serially connected dots
92110
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
2008
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi
(2008)
Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation.
Applied Physics Letters, 92 (9), .
(doi:10.1063/1.2891063).
Abstract
This paper reports the observation of stochastic Coulomb blockade for the coupled silicon dots. The device was fabricated from the highly doped dual recess structured silicon channel by means of stress induced pattern-dependent oxidation. Sparsely placed Coulomb oscillation characteristics were observed from the transport characteristics at a low temperature and these irregularities decreased linearly as temperature increased. These characteristics were interpreted as the stochastic Coulomb blockade effect, which occurs due to the mismatch between individual dots in the energy spectrum ladder of the serially connected dots
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Published date: 2008
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266172
URI: http://eprints.soton.ac.uk/id/eprint/266172
ISSN: 0003-6951
PURE UUID: 8ae3c3aa-ab0e-4885-a789-ea267a238e07
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Date deposited: 21 Jul 2008 14:40
Last modified: 14 Mar 2024 08:21
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Author:
M. Manoharan
Author:
Yoshishige Tsuchiya
Author:
S. Oda
Author:
Hiroshi Mizuta
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