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Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe

Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe
Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe
Silicon single electron transistors were fabricated by using the highly doped silicon channel with dual recess structure along with two recess gates and one central island gate as a pattern. The transition of Coulomb oscillation characteristics from a single dot to a strongly coupled multiple dot was demonstrated for the different oxidation times and recess dimensions. The multiple-dot characteristic in the longer post lithography oxidized sample is attributed to the formation of a single dot in each recess due to the stress induced pattern-dependent oxidation, which leads to multiple dot in the channel. The temperature variation measurement, which was performed after two thermal cycling of the same sample to 20 and 4.2?K with 1?month gap, revealed the highly stable nature of the multiple-dot device transport characteristics. The multiple-dot device can also be operated as a unique nonlinear tunable resistance single electron transistor
0021-8979
43719
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Kawata, Y.
b09a7d16-5971-4e08-b49f-16a2a1c5b9a2
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Kawata, Y.
b09a7d16-5971-4e08-b49f-16a2a1c5b9a2
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe. Journal of Applied Physics, 103 (4), 43719. (doi:10.1063/1.2885343).

Record type: Article

Abstract

Silicon single electron transistors were fabricated by using the highly doped silicon channel with dual recess structure along with two recess gates and one central island gate as a pattern. The transition of Coulomb oscillation characteristics from a single dot to a strongly coupled multiple dot was demonstrated for the different oxidation times and recess dimensions. The multiple-dot characteristic in the longer post lithography oxidized sample is attributed to the formation of a single dot in each recess due to the stress induced pattern-dependent oxidation, which leads to multiple dot in the channel. The temperature variation measurement, which was performed after two thermal cycling of the same sample to 20 and 4.2?K with 1?month gap, revealed the highly stable nature of the multiple-dot device transport characteristics. The multiple-dot device can also be operated as a unique nonlinear tunable resistance single electron transistor

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Published date: 2008
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266173
URI: https://eprints.soton.ac.uk/id/eprint/266173
ISSN: 0021-8979
PURE UUID: 2118d0ee-e955-48e3-a574-344848f0b925

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Date deposited: 21 Jul 2008 14:44
Last modified: 17 Jul 2019 22:12

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