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Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position

Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position
Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position
0021-4922
8322
Walker, P.
714abe6b-604c-4239-93fd-20cfd2b4de1e
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Walker, P.
714abe6b-604c-4239-93fd-20cfd2b4de1e
Uno, S.
ad5d0b8f-4180-46db-b7e8-4d38c4d0bc61
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Walker, P., Uno, S. and Mizuta, Hiroshi (2005) Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position. Japanese Journal of Applied Physics, 44, 8322.

Record type: Article
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Published date: 2005
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266191
URI: http://eprints.soton.ac.uk/id/eprint/266191
ISSN: 0021-4922
PURE UUID: 88424a22-1911-4e42-94ab-5f51666713ca

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Date deposited: 21 Jul 2008 15:52
Last modified: 14 Mar 2024 08:22

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Contributors

Author: P. Walker
Author: S. Uno
Author: Hiroshi Mizuta

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