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Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices

Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices
Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices
351-354
Kamiya, T.
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Furuta, Y.
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Tan, Y. -T.
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Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Mizuta, Hiroshi
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Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Tan, Y. -T.
269ec9e0-fb2a-4c35-81c7-ddaac05aa2f5
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf

Kamiya, T., Furuta, Y., Tan, Y. -T., Durrani, Z. A. K., Mizuta, Hiroshi and Ahmed, H. (2003) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices. Solid State Phenomena, 93, 351-354.

Record type: Article
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Published date: 2003
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266206
URI: http://eprints.soton.ac.uk/id/eprint/266206
PURE UUID: 0dea530e-425f-445f-94b7-f23722f25373

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Date deposited: 22 Jul 2008 08:26
Last modified: 14 Mar 2024 08:23

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Contributors

Author: T. Kamiya
Author: Y. Furuta
Author: Y. -T. Tan
Author: Z. A. K. Durrani
Author: Hiroshi Mizuta
Author: H. Ahmed

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