The University of Southampton
University of Southampton Institutional Repository

Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K. and Taniguchi, K. (2002) Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors Japanese Journal of Applied Physics, 41, pp. 2675-2678.

Record type: Article
PDF paper_49.pdf - Other
Download (176kB)

More information

Published date: 2002
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266211
URI: http://eprints.soton.ac.uk/id/eprint/266211
ISSN: 0021-4922
PURE UUID: 3c43a6dc-ef6f-4249-a4d0-9615cb1005b8

Catalogue record

Date deposited: 22 Jul 2008 08:57
Last modified: 18 Jul 2017 07:19

Export record

Contributors

Author: Y. Furuta
Author: Hiroshi Mizuta
Author: K. Nakazato
Author: T. Kamiya
Author: Y. T. Tan
Author: Z. A. K. Durrani
Author: K. Taniguchi

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×