Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime


Evans, G., Mizuta, Hiroshi and Ahmed, H. (2001) Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime Japanese Journal of Applied Physics, 40, pp. 5837-5840.

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Item Type: Article
ISSNs: 0021-4922 (print)
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266213
Date :
Date Event
2001Published
Date Deposited: 22 Jul 2008 09:01
Last Modified: 17 Apr 2017 19:07
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266213

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