Evans, G., Mizuta, Hiroshi and Ahmed, H. (2001) Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime. Japanese Journal of Applied Physics, 40, 5837-5840.
Record type:
Article
More information
Published date: 2001
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266213
URI: http://eprints.soton.ac.uk/id/eprint/266213
ISSN: 0021-4922
PURE UUID: e8faf5c2-5644-4172-9362-7acda9fd3d82
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Date deposited: 22 Jul 2008 09:01
Last modified: 14 Mar 2024 08:22
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Contributors
Author:
G. Evans
Author:
Hiroshi Mizuta
Author:
H. Ahmed
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