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Carrier transport across few grain boundaries in highly doped polycrystalline silicon

Carrier transport across few grain boundaries in highly doped polycrystalline silicon
Carrier transport across few grain boundaries in highly doped polycrystalline silicon
0021-4922
L615-L617
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Tan, Y. T.
2a1d615d-e201-4488-8eaf-c8bef61d68aa
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Taniguchi, K.
9e6a93cb-1569-4d99-8507-9b227531c39b
Furuta, Y.
2b3632d6-4ef3-4bce-a686-0e0973b35dcd
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Tan, Y. T.
2a1d615d-e201-4488-8eaf-c8bef61d68aa
Kamiya, T.
d52831ff-3dba-4d58-abd2-55958ebade6e
Durrani, Z. A. K.
193df358-3ef5-4cd9-8f77-359c697e839d
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Taniguchi, K.
9e6a93cb-1569-4d99-8507-9b227531c39b

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon. Japanese Journal of Applied Physics, 40, L615-L617.

Record type: Article
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More information

Published date: 2001
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266216
URI: http://eprints.soton.ac.uk/id/eprint/266216
ISSN: 0021-4922
PURE UUID: 96264c0e-8343-41e3-ab02-1e75f438f302

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Date deposited: 22 Jul 2008 09:10
Last modified: 14 Mar 2024 08:22

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Contributors

Author: Y. Furuta
Author: Hiroshi Mizuta
Author: K. Nakazato
Author: Y. T. Tan
Author: T. Kamiya
Author: Z. A. K. Durrani
Author: H. Ahmed
Author: K. Taniguchi

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