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Carrier transport across few grain boundaries in highly doped polycrystalline silicon

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon Japanese Journal of Applied Physics, 40, L615-L617.

Record type: Article
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Published date: 2001
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266216
URI: http://eprints.soton.ac.uk/id/eprint/266216
ISSN: 0021-4922
PURE UUID: 96264c0e-8343-41e3-ab02-1e75f438f302

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Date deposited: 22 Jul 2008 09:10
Last modified: 18 Jul 2017 07:19

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Contributors

Author: Y. Furuta
Author: Hiroshi Mizuta
Author: K. Nakazato
Author: Y. T. Tan
Author: T. Kamiya
Author: Z. A. K. Durrani
Author: H. Ahmed
Author: K. Taniguchi

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