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Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's

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Citation

Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's IEEE Transactions on Electron Devices, ED-36, pp. 2307-2314.

More information

Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266247
URI: http://eprints.soton.ac.uk/id/eprint/266247
PURE UUID: 514bc688-3685-4a61-b92d-3090cc2f5457

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Date deposited: 22 Jul 2008 10:44
Last modified: 18 Jul 2017 07:18

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Contributors

Author: Hiroshi Mizuta
Author: K. Yamaguchi
Author: M. Yamane
Author: T. Tanoue
Author: S. Takahashi

University divisions


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