Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's


Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's IEEE Transactions on Electron Devices, ED-36, pp. 2307-2314.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266247
Date :
Date Event
1989Published
Date Deposited: 22 Jul 2008 10:44
Last Modified: 17 Apr 2017 19:06
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266247

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