Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's
Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's
2307-2314
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Yamane, M.
1773e771-9454-473d-b1a7-33f42d1c64b6
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
1989
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Yamane, M.
1773e771-9454-473d-b1a7-33f42d1c64b6
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T. and Takahashi, S.
(1989)
Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's.
IEEE Transactions on Electron Devices, ED-36, .
More information
Published date: 1989
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266247
URI: http://eprints.soton.ac.uk/id/eprint/266247
PURE UUID: 514bc688-3685-4a61-b92d-3090cc2f5457
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Date deposited: 22 Jul 2008 10:44
Last modified: 14 Mar 2024 08:23
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Contributors
Author:
Hiroshi Mizuta
Author:
K. Yamaguchi
Author:
M. Yamane
Author:
T. Tanoue
Author:
S. Takahashi
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