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Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's
Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's
2307-2314
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Yamane, M.
1773e771-9454-473d-b1a7-33f42d1c64b6
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Yamane, M.
1773e771-9454-473d-b1a7-33f42d1c64b6
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e

Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's. IEEE Transactions on Electron Devices, ED-36, 2307-2314.

Record type: Article
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Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266247
URI: https://eprints.soton.ac.uk/id/eprint/266247
PURE UUID: 514bc688-3685-4a61-b92d-3090cc2f5457

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Date deposited: 22 Jul 2008 10:44
Last modified: 24 Oct 2017 16:31

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Contributors

Author: Hiroshi Mizuta
Author: K. Yamaguchi
Author: M. Yamane
Author: T. Tanoue
Author: S. Takahashi

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