Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's
Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's
2027-2033
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
1987
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S.
(1987)
Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's.
IEEE Transactions on Electron Devices, ED-34, .
More information
Published date: 1987
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266252
URI: http://eprints.soton.ac.uk/id/eprint/266252
PURE UUID: 9df19d39-f314-4422-a980-0cfb19edf25b
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Date deposited: 22 Jul 2008 10:56
Last modified: 14 Mar 2024 08:23
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Contributors
Author:
Hiroshi Mizuta
Author:
K. Yamaguchi
Author:
S. Takahashi
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